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Benchtop, turnkey system for rapid synthesis of high-quality Graphene
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Document Title | nanoCVD-8G |
---|---|
Document Type | Product Catalog |
File size | 441.8Kb |
Category | |
Company | Thermocera Japan Ltd. (Documents List) |
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Document Contents
Page1
nanoCVD-8G
Benchtop, turnkey system for rapid synthesis of high-quality
graphene
Key Features:
• Ultra-compact, benchtop, CVD system • User-friendly, touchscreen interface
• Reproducible synthesis of high-quality graphene • Define/save multiple growth recipes
• Precise control of conditions • PC connection for data-logging
• 1100 °C maximum temperature • Equipped for easy servicing
• Process times <30 minutes • Comprehensive safety features
• 20 × 40 mm2 maximum substrate size • Cleanroom compatible
• Fully-automatic • Proven performance
MOORFIELD NANOTECHNOLOGY Unit 1, Wolfe Close, Parkgate Industrial Estate, Knutsford, Cheshire, UK, WA16 8XJ
+44 (0)1565 722609 +44 (0)1565 722758 sales@moorfield.co.uk moorfield.co.uk Page 1
Moorfield Nanotechnology Limited. Registered in England and Wales with company number 3044718. Registered address: 112–114 Witton Street, Northwich, Cheshire, CW9 5NW.
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nanoCVD-8G
System Description:
Developed in collaboration with academic partners, the nanoCVD-8G is designed for the high-
throughput production of high-quality graphene for R&D and pilot-scale applications. Synthesis is via the
well-established chemical vapour deposition (CVD) route. This method allows for rapid production, and,
in contrast to approaches such as mechanical exfoliation (i.e., the “sticky-tape method”), is also scalable
making it promising for future commercialisation of graphene-based technologies.
Technology:
The system contains a low thermal-mass heater stage onto which film or foil substrates can be placed.
The stage slides into a small volume, cold-walled reaction chamber, which is sealed during process
operation, and is designed for uniform heating over areas up to 20 x 40 mm2. The maximum setpoint
temperature is 1100 °C, and temperatures can be set and controlled with a resolution of 1 °C. The unit
is capable of high heating/cooling rates, if required, allowing for complete growth cycles <30 minutes.
Such efficient operation also results in minimised resource usage (e.g., in terms of power and process
gases).
Process gases are controlled via mass-flow controllers (MFCs). The standard configuration is equipped
for 3 process gases: argon, methane and hydrogen. The system is capable of operating in flow-rate or
pressure control modes. Automatic pressure control is possible throughout the range 0-20 Torr. Pressure
measurement is by capacitance manometer, with pumping by rotary or scroll-type backing pumps.
The nanoCVD-8G allows for graphene synthesis via a wide variety of CVD schemes, including, but not
limited to, those based on metal substrates and using methane as feedstock gas that are known to
provide high-quality material.
Control System:
The unit is fitted with industrial-grade PLC electronics. User operation is via a 5” touchscreen HMI
mounted on the front panel. Users are able to define, store and run multiple ‘recipes’ via flexible, but
easy-to-use, touchscreen software. Online data-logging and recipe upload/download to a PC is possible
via the provided NanoConnect software.
Screenshots from the touchscreen HMI software through which all user operation of the nanoCVD-8G is carried out.
MOORFIELD NANOTECHNOLOGY Unit 1, Wolfe Close, Parkgate Industrial Estate, Knutsford, Cheshire, UK, WA16 8XJ
+44 (0)1565 722609 +44 (0)1565 722758 sales@moorfield.co.uk moorfield.co.uk Page 2
Moorfield Nanotechnology Limited. Registered in England and Wales with company number 3044718. Registered address: 112–114 Witton Street, Northwich, Cheshire, CW9 5NW.
Page3
nanoCVD-8G
nanoCVD-8G Graphene:
Graphene samples synthesised using a nanoCVD-8G have been characterised using Raman spectroscopy,
high magnetic field transport, and electron and optical microscopies. The graphene produced was
shown to be monolayer, have high quality with low intrinsic doping, and macroscopic uniformity.
Transistor devices show high charge carrier mobilities, 3300 cm2/(V∙s) at 1.4 K and 2773 cm2/(V∙s) at room
temperature. Hall bar devices at high magnetic fields indicated the half integer quantum Hall effect
(unique to monolayer graphene). Such observations provide strong evidence for the exceptional quality
of the material that can be produced using the nanoCVD-8G.
For full results, see reference 1.
Characterisation indicating high-quality, defect-free graphene produced using a nanoCVD-8G. Left: Raman spectrum. Right:
Longitudinal resistivity and Hall conductance data indicating half integer quantum Hall effect unique to monolayer graphene
(data taken from reference 1).
Graphene produced with the nanoCVD-8G has found
multiple applications:
• Optoelectronics: As electrodes for flexible and
transparent touch sensors, and in photovoltaic
devices.
• Biosensors: Functionalisation of graphene surfaces
has allowed for detection of specific proteins using
electrical transport techniques.
• CVD growth mechanisms: Given its rapid heating/ A flexible and transparent
cooling abilities and cold-walled design, the touch sensor fabricated from
nanoCVD-8G and its graphene have allowed for graphene made using a
nanoCVD-8G. Taken from reference 1.
detailed studies of CVD synthesis.
• Fundamental transport: Investigation of exotic
physics in graphene with low intrinsic doping, such as the quantum Hall effect over large areas, and
high charge carrier mobilities.
MOORFIELD NANOTECHNOLOGY Unit 1, Wolfe Close, Parkgate Industrial Estate, Knutsford, Cheshire, UK, WA16 8XJ
+44 (0)1565 722609 +44 (0)1565 722758 sales@moorfield.co.uk moorfield.co.uk Page 3
Moorfield Nanotechnology Limited. Registered in England and Wales with company number 3044718. Registered address: 112–114 Witton Street, Northwich, Cheshire, CW9 5NW.
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nanoCVD-8G
References:
1. Bointon, T. H., et al. “High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor
Deposition” Adv. Mater. 2015 DOI: 10.1002/adma.201501600
2. Neves, A. I. S., et al. “Transparent Conductive Graphene Textile Fibers” Sci. Rep. 2015 DOI: 10.1038/srep09866
3. Lupina, G., et al. “Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene” ACS Nano 2015
DOI: 10.1021/acsnano.5b01261
System Requirements—Standard Configuration:
• Substrates: Typically foils/films of various metals.
• Process gases: 25 psi supplies of methane, hydrogen and argon.
• Service gas: Dry inert (e.g., nitrogen or argon), 60–80 psi supply.
• Power: Single-phase 230 V, 50 Hz, 10 A.
• Exhaust extraction.
Applications: Distributed By:
• Fundamental research.
• Education.
• Product R&D.
moorfield.co.uk
nanoCVD.co.uk
MOORFIELD NANOTECHNOLOGY Unit 1, Wolfe Close, Parkgate Industrial Estate, Knutsford, Cheshire, UK, WA16 8XJ
+44 (0)1565 722609 +44 (0)1565 722758 sales@moorfield.co.uk moorfield.co.uk Page 4
Moorfield Nanotechnology Limited. Registered in England and Wales with company number 3044718. Registered address: 112–114 Witton Street, Northwich, Cheshire, CW9 5NW.