HiPerFRED DSEP29-12A

DSEP29-12A HiPerFRED VRRM = 1200 V I FAV = 30 A t rr = 40ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP29-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Antiparallel diode for high frequency ● Industry standard outline ● Very low leakage current switching devices ● RoHS compliant ● Very short recovery time ● Antisaturation diode ● Epoxy meets UL 94V-0 ● Improved thermal behaviour ● Snubber diode ● Very low Irm-values ● Free wheeling diode ● Very soft recovery behaviour ● Rectifiers in switch mode power ● Avalanche voltage rated for reliable operation supplies (SMPS) ● Soft reverse recovery for low EMI/RFI ● Uninterruptible power supplies (UPS) ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160921b © 2016 IXYS all rights reserved

DSEP29-12A Fast Diode Ratings Symbol Definition Conditions min. typ. max. Unit VRSM max. non-repetitive reverse blocking voltage T V J = 25°C 1200 V VRRM max. repetitive reverse blocking voltage T V J = 25°C 1200 V I R reverse current, drain current VR = 1 2 0 0 V T V J = 25°C 250 µA VR = 1 2 0 0 V T V J = 1 5 0 °C 1 mA VF forward voltage drop I F = 3 0 A T V J = 25°C 2.75 V I F = 6 0 A 3.30 V I F = 3 0 A T V J = 1 5 0 °C 1.81 V I F = 6 0 A 2.34 V I FAV average forward current T C = 1 2 0 °C T V J = 1 7 5 °C 30 A rectangular d = 0.5 VF0 threshold voltage T V J = 1 7 5 °C 1.12 V for power loss calculation only rF slope resistance 16.6 mΩ R thJC thermal resistance junction to case 0.9 K/W R thCH thermal resistance case to heatsink 0.50 K/W Ptot total power dissipation T C = 25°C 165 W IFSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V T V J = 45°C 200 A CJ junction capacitance VR = 6 0 0 V f = 1 MHz T V J = 25°C 12 pF IRM max. reverse recovery current TVJ = 25 °C 8.5 A IF = 30 A; VR = 600 V TVJ = 100°C 13 A t rr reverse recovery time -di F /dt = 200A/µs TVJ = 25 °C 60 ns TVJ = 100°C 170 ns IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160921b © 2016 IXYS all rights reserved

DSEP29-12A Package TO-220 Ratings Symbol Definition Conditions min. typ. max. Unit I RMS RMS current per terminal 35 A TVJ virtual junction temperature -55 175 °C Top operation temperature -55 150 °C Tstg storage temperature -55 150 °C Weight 2 g MD mounting torque 0.4 0.6 Nm F C mounting force with clip 20 60 N Product Marking Part Number XXXXXX Logo Zyyww Assembly Line Lot # abcdef Date Code Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No. Standard DSEP29-12A DSEP29-12A Tube 50 477125 Similar Part Package Voltage class DSEP29-12B TO-220AC (2) 1200 DSEP30-12A TO-247AD (2) 1200 DSEP30-12AR ISOPLUS247 (2) 1200 DSEP30-12B TO-247AD (2) 1200 Equivalent Circuits for Simulation * on die level T V J = 175 °C I V R Fast 0 0 Diode V0 max threshold voltage 1.12 V R0 max slope resistance * 13.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160921b © 2016 IXYS all rights reserved

DSEP29-12A Outlines TO-220 A Dim. Millimeter Inches = supplier option A1 Min. Max. Min. Max. E A 4.32 4.82 0.170 0.190 A1 1.14 1.39 0.045 0.055 ØP A2 2.29 2.79 0.090 0.110 4 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 C 0.35 0.56 0.014 0.022 1 3 D 14.73 16.00 0.580 0.630 2x b2 E 9.91 10.66 0.390 0.420 e 5.08 BSC 0.200 BSC H1 5.85 6.85 0.230 0.270 L 12.70 13.97 0.500 0.550 2x b L1 2.79 5.84 0.110 0.230 C e ØP 3.54 4.08 0.139 0.161 A2 Q 2.54 3.18 0.100 0.125 3 1 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160921b © 2016 IXYS all rights reserved L1 Q L D H1

DSEP29-12A Fast Diode 70 5 60 T = 100°C VJ V = 600 V 60 R 50 T = 150°C 4 VJ I = 60 A F 50 100°C 30 A 25°C I = 60 A F 40 15 A I 40 Q 3 30 A F r I 15 A RM 30 [A] 30 [µC] 2 [A] 20 20 1 10 10 T = 100°C VJ V = 600 V R 0 0 0 0 1 2 3 4 100 1000 0 200 400 600 800 1000 VF [V] -di F /dt [A/µs] -di F /dt [A/µs] Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current IF versus VF Qr versus -diF /dt IRM versus -diF /dt 2.0 220 120 1.2 T = 100°C VJ V = 600 V R T = 100°C 100 VJ 1.0 200 I = 30 A F 1.5 I = 60 A 80 0.8 F t 180 30 A VFR rr K 15 A t 1.0 60 0.6 fr f [ns] [V] [µs] 160 I 40 0.4 RM 0.5 140 Q 20 0.2 R V trr FR 0.0 120 0 0.0 0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000 TVJ [°C] -di F /dt [A/µs] -di F /dt [A/µs] Fig. 4 Typ. dynamic parameters Fig. 5 Typ. recovery time Fig. 6 Typ. peak forward voltage Qr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt 1 0.1 Constants for ZthJC calculation: ZthJC [K/W] i Rthi (K/W) ti (s) 1 0.030 0.001 0.01 2 0.080 0.030 3 0.300 0.006 4 0.490 0.060 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160921b © 2016 IXYS all rights reserved