X2-Class HiPERFET Power MOSFET

X2-Class HiPERFET IXFA12N65X2 VDSS = 650V Power MOSFET IXFP12N65X2 ID25 = 12A IXFH12N65X2 RDS(on)  310m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) TO-220 (IXFP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V G D I S D25 TC = 25C 12 A D (Tab) IDM TC = 25C, Pulse Width Limited by TJM 24 A TO-247 (IXFH) IA TC = 25C 6 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns G PD TC = 25C 180 W D S D (Tab) TJ -55 ... +150 C T  G = Gate D = Drain JM 150 C S = Source Tab = Drain Tstg -55 ... +150 C TL Maximum Lead Temperature for Soldering 300 °C TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C Features FC Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb Md Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in  International Standard Packages Weight TO-263 2.5 g  Low RDS(ON) and QG TO-220 3.0 g  Avalanche Rated TO-247 6.0 g  Low Package Inductance Advantages Symbol Test Conditions Characteristic Values (TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.  High Power Density  Easy to Mount BVDSS VGS = 0V, ID = 250μA 650 V  Space Savings VGS(th) VDS = VGS, ID = 250μA 3.0 5.0 V IGSS VGS = 30V, VDS = 0V 100 nA Applications IDSS VDS = V  DSS, VGS = 0V 10 A Switch-Mode and Resonant-Mode T = 125C 500 A Power Supplies J  DC-DC Converters R V = 10V, I  DS(on) GS D = 0.5 • ID25, Note 1 310 m PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls © 2018 IXYS CORPORATION, All Rights Reserved DS100749B(6/18)

IXFA12N65X2 IXFP12N65X2 IXFH12N65X2 Symbol Test Conditions Characteristic Values (TJ = 25C, Unless Otherwise Specified) Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 4.8 8.0 S RGi Gate Input Resistance 4.0  Ciss 1134 pF Coss VGS = 0V, VDS = 25V, f = 1MHz 712 pF Crss 1 pF Effective Output Capacitance Co(er) E n e r g y r e l a t e d V = 0 V 42 pF GS Co(tr) T im e r e l a t e d V = 0 . 8 • V 132 pF DS DSS td(on) 27 ns Resistive Switching Times tr 26 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • I t D25 d(off)  45 ns RG = 20 (External) tf 12 ns Qg(on) 18.5 nC Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 6.7 nC Qgd 5.0 nC RthJC 0.69 C/W RthCS TO-220 0.50 C/W TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (TJ = 25C, Unless Otherwise Specified) Min. Typ. Max IS VGS = 0V 12 A ISM Repetitive, pulse Width Limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr I = 6A, -di/dt = 100A/μs 155 ns F QRM 1 μC VR = 100V IRM 13 A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

IXFA12N65X2 IXFP12N65X2 IXFH12N65X2 Fig. 1. Output Characteristics @ T = 25o J C Fig. 2. Extended Output Characteristics @ T = 25o J C 12 24 VGS = 10V VGS = 10V 8V 9V 10 20 7V 8V 8 16 6 12 7V 4 6V 8 6V 2 4 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 15 20 25 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Fig. 3. Output Characteristics @ TJ = 125oC Junction Temperature 12 4.5 VGS = 10V 8V 4.0 VGS = 10V 10 7V 3.5 8 3.0 6V 2.5 I D = 12A 6 2.0 4 1.5 I D = 6A 5V 1.0 2 0.5 4V 0 0.0 0 2 4 6 8 10 12 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages Drain Current vs. Junction Temperature 4.0 1.3 VGS = 10V 3.5 1.2 TJ = 125oC BV 3.0 1.1 DSS 2.5 1.0 2.0 0.9 1.5 0.8 T = 25oC V J GS(th) 1.0 0.7 0.5 0.6 0 2 4 6 8 10 12 14 16 18 20 22 -60 -40 -20 0 20 40 60 80 100 120 140 160 ID - Amperes TJ - Degrees Centigrade © 2018 IXYS CORPORATION, All Rights Reserved RDS(on) - Normalized ID - Amperes ID - Amperes BVDSS / VGS(th) - Normalized RDS(on) - Normalized ID - Amperes

IXFA12N65X2 IXFP12N65X2 IXFH12N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 14 10 9 12 8 o 10 7 TJ = 125 C 25oC 6 8 - 40oC 5 6 4 4 3 2 2 1 0 0 -50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 TC - Degrees Centigrade VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 12 40 TJ = - 40oC 35 10 30 8 25oC 25 6 20 o TJ = 125oC 125 C 15 4 T o J = 25 C 10 2 5 0 0 0 1 2 3 4 5 6 7 8 9 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 ID - Amperes VSD - Volts Fig. 11. Gate Charge Fig. 12. Capacitance 10 10000 VDS = 325V I D = 6A 8 1000 I G = 10mA Ciss 6 100 Coss 4 10 2 1 f = 1 MHz Crss 0 0.1 0 2 4 6 8 10 12 14 16 18 20 1 10 100 1000 QG - NanoCoulombs VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. VGS - Volts g f s - Siemens ID - Amperes Capacitance - PicoFarads IS - Amperes ID - Amperes

IXFA12N65X2 IXFP12N65X2 IXFH12N65X2 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 9 100 8 RDS(on) Limit 25μs 7 10 6 100μs 5 1 4 3 0.1 2 TJ = 150oC 1ms TC = 25oC 1 Single Pulse 10ms DC 0 0.01 0 100 200 300 400 500 600 10 100 1,000 V - Volts VDS - Volts DS Fig. 15. Maximum Transient Thermal Impedance 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_12N65X2 (X3-S602) 9-08-16 Z(th)JC - K / W EOSS - MicroJoules ID - Amperes

IXFA12N65X2 IXFP12N65X2 IXFH12N65X2 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

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