Vishay Siliconix　SQJ264EP

SQJ264EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs FEATURES PowerPAK® SO-8L Dual Asymmetric • TrenchFET® power MOSFET • AEC-Q101 qualified D1 • 100 % Rg and UIS tested • Optimized for synchronous buck applications D2 • Material categorization: 1 for definitions of compliance please see 2 S1 www.vishay.com/doc?99912 m 3 G1 3 m S 1 5.1 4 2 G D 1 D 2 2 Top View Bottom View PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2 G 1 G 2 VDS (V) 60 60 RDS(on) (Ω) at VGS = 10 V 0.0200 0.0086 ID (A) 20 54 Configuration Dual S S Package PowerPAK SO-8L asymmetric 1 2 N-Channel 1 MOSFET N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT Drain-source voltage VDS 60 60 V Gate-source voltage VGS ± 20 TC = 25 °C 20 a 54 Continuous drain current ID TC = 125 °C 15 31 Continuous source current (diode conduction) I 20 a S 44 A Pulsed drain current b IDM 65 90 Single pulse avalanche current IAS 19 31 L = 0.1 mH Single pulse avalanche energy EAS 18 48 mJ TC = 25 °C 27 48 Maximum power dissipation b PD W TC = 125 °C 9 16 Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) d, e 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT Junction-to-ambient PCB mount c RthJA 85 85 °C/W Junction-to-case (drain) RthJC 5.5 3.1 Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is expose d copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guarantee d and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S19-1108-Rev. A, 30-Dec-2019 1 Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 m m 6.1 5

SQJ264EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static VGS = 0 V, ID = 250 μA N-Ch 1 60 - - Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA N-Ch 2 60 - - V VDS = VGS, ID = 250 μA N-Ch 1 2.5 3.0 3.5 Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA N-Ch 2 2.5 3.0 3.5 N-Ch 1 - - ± 100 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V nA N-Ch 2 - - ± 100 VGS = 0 V VDS = 60 V N-Ch 1 - - 1 VGS = 0 V VDS = 60 V N-Ch 2 - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C N-Ch 1 - - 50 Zero gate voltage drain current IDSS μA VGS = 0 V VDS = 60 V, TJ = 125 °C N-Ch 2 - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C N-Ch 1 - - 250 VGS = 0 V VDS = 60 V, TJ = 175 °C N-Ch 2 - - 250 VGS = 10 V VDS ≥ 5 V N-Ch 1 15 - - On-state drain current a ID(on) A VGS = 10 V VDS ≥ 5 V N-Ch 2 30 - - VGS = 10 V ID = 6 A N-Ch 1 - 0.0165 0.0200 VGS = 10 V ID = 10 A N-Ch 2 - 0.0071 0.0086 V = 10 V I = 6 A, T = 125 °C N-Ch 1 - - 0.0320 Drain-source on-state resistance a GS D J RDS(on) Ω VGS = 10 V ID = 10 A, TJ = 125 °C N-Ch 2 - - 0.0135 VGS = 10 V ID = 6 A, TJ = 175 °C N-Ch 1 - - 0.0390 VGS = 10 V ID = 10 A, TJ = 175 °C N-Ch 2 - - 0.0167 V = 10 V, I = 6 A N-Ch 1 - 24 - Forward transconductance b DS D gfs S VDS = 10 V, ID = 10 A N-Ch 2 - 98 - Dynamic b VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 687 1000 Input capacitance Ciss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 1490 2100 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 313 500 Output capacitance Coss pF VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 777 1100 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 10 15 Reverse transfer capacitance Crss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 21 30 VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 9.2 16 Total gate charge c Qg VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 19.2 32 VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 3.2 - nC Gate-source charge c Qgs VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 6.3 - VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 0.8 - Gate-drain charge c Qgd VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 1.5 - N-Ch 1 0.35 0.74 1.20 Gate resistance Rg f = 1 MHz Ω N-Ch 2 0.20 0.42 0.65 S19-1108-Rev. A, 30-Dec-2019 2 Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SQJ264EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamic b VDD = 30 V, RL = 20 Ω, I ≅ 1.5 A, V = 10 V, R = 1 Ω N-Ch 1 - 11 18 Turn-on delay time c D GEN g td(on) VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, V = 10 V, R = 1 Ω N-Ch 2 - 12 25 GEN g VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, V = 10 V, R = 1 Ω N-Ch 1 - 2 5 GEN g Rise time c tr VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 3 5 ns VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, V N-Ch 1 - 16 30 c GEN = 10 V, Rg = 1 Ω Turn-off delay time td(off) VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 20 40 VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, R = 1 Ω N-Ch 1 - 8 15 g Fall time c tf VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, R = 1 Ω N-Ch 2 - 11 18 g Source-Drain Diode Ratings and Characteristics b N-Ch 1 - - 65 Pulsed current a ISM A N-Ch 2 - - 90 IF = 6 A, VGS = 0 V N-Ch 1 - 0.82 1.2 Forward voltage VSD V IF = 10 A, VGS = 0 V N-Ch 2 - 0.80 1.2 IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 22 45 Body diode reverse recovery time trr ns IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 41 85 IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 15 30 Body diode reverse recovery charge Qrr nC IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 36 75 IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 12 - Reverse recovery fall time ta IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 19 - ns IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 10 - Reverse recovery rise time tb IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 22 - Body diode peak reverse recovery IF = 4 A, di/dt = 100 A/μs N-Ch 1 - -1.3 - current IRM(REC) A IF = 5 A, di/dt = 100 A/μs N-Ch 2 - -1.6 - Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-1108-Rev. A, 30-Dec-2019 3 Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SQJ264EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 80 10000 0.10 10000 64 VGS = 10 V thru 7 V 0.08 1000 1000 48 0.06 VGS = 6 V 32 0.04 100 100 VGS = 5 V V 16 GS = 10 V 0.02 VGS = 4 V 0 10 0.00 10 0 2 4 6 8 10 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Output Characteristics Transconductance Axis Title Axis Title 70 10000 10 000 10000 56 1000 Ciss 1000 C 1000 42 oss 100 28 TC = 25 °C 100 100 10 Crss 14 TC = -55 °C TC = 125 °C 0 10 1 10 0 2 4 6 8 10 0 12 24 36 48 60 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Capacitance Axis Title Axis Title 50 10000 10 10000 T = -55 °C ID = 1.5 A, C VDS = 30 V 40 8 TC = 25 °C 1000 1000 30 6 TC = 125 °C 20 4 100 100 10 2 0 10 0 10 0 3 6 9 12 15 0 3 6 9 12 15 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge S19-1108-Rev. A, 30-Dec-2019 4 Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2nd line 2nd line 2nd line gfs - Transconductance (S) ID - Drain Current (A) ID - Drain Current (A) 1st line 1st line 1st line 2nd line 2nd line 2nd line 2nd line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1st line 1st line 1st line 2nd line 2nd line 2nd line

SQJ264EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 2.0 10000 0.10 10000 1.7 ID = 4 A 0.08 1000 1000 1.4 VGS = 10 V 0.06 1.1 0.04 100 TJ = 150 °C 100 0.8 0.02 TJ = 25 °C 0.5 10 0.00 10 -50 -25 0 25 50 75 100 125 150 175 0 2 4 6 8 10 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 76 10000 0.5 10000 ID = 1 mA 74 0.1 1000 1000 72 -0.3 ID = 5 mA 70 -0.7 100 100 68 -1.1 ID = 250 μA 66 10 -1.5 10 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 100 10000 100 10000 TJ = 150 °C IDM limited 10 10 100 μs 1000 1000 ID limited 1 ms 1 1 10 ms TJ = 25 °C 100 ms, 1 s, Limited by R a 100 DS(on) 10 s1, 0D0C 0.1 0.1 BVDSS limited TC = 25 °C, single pulse 0.01 10 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Safe Operating Area S19-1108-Rev. A, 30-Dec-2019 5 Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2nd line 2nd line 2nd line IS - Source Current (A) VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Normalized) 1st line 1st line 1st line 2nd line 2nd line 2nd line 2nd line 2nd line 2nd line ID - Drain Current (A) VGS(th) - Variance (V) RDS(on) - On-Resistance (Ω) 1st line 1st line 1st line 2nd line 2nd line 2nd line

SQJ264EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 10000 1 Duty cycle = 0.5 0.2 1000 Notes 0.1 PDM 0.1 0.05 t1 t 100 2 t 0.02 1. Duty cycle, D = 1 t2 2. Per unit base = RthJA = 85 °C/W Single pulse 3. TJM - TA = P (t) DMZthJA 4. Surface mounted 0.01 10 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 1 Duty cycle = 0.5 0.2 1000 0.1 0.1 0.05 100 Single pulse 0.02 0.01 10 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from singl e pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the par t mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions S19-1108-Rev. A, 30-Dec-2019 6 Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Normalized Effective Transient Normalized Effective Transient Thermal Impedance Thermal Impedance 1st line 1st line 2nd line 2nd line

SQJ264EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.025 10000 VGS = 10 V thru 6 V 80 VGS = 5 V 0.020 1000 1000 60 0.015 40 0.010 VGS = 10 V 100 100 VGS = 4 V 20 0.005 0 10 0 10 0 2 4 6 8 10 0 16 32 48 64 80 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Output Characteristics Transconductance Axis Title Axis Title 80 10000 10 000 10000 64 Ciss 1000 1000 Coss 1000 48 TC = 25 °C 32 100 100 100 16 TC = 125 °C Crss TC = -55 °C 0 10 10 10 0 2 4 6 8 10 0 12 24 36 48 60 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Capacitance Axis Title Axis Title 150 10000 10 10000 TC = -55 °C 120 8 ID = 3 A, TC = 25 °C VDS = 30 V 1000 1000 90 6 TC = 125 °C 60 4 100 100 30 2 0 10 0 10 0 3 6 9 12 15 0 6 12 18 24 30 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge S19-1108-Rev. A, 30-Dec-2019 7 Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2nd line 2nd line 2nd line gfs - Transconductance (S) ID - Drain Current (A) ID - Drain Current (A) 1st line 1st line 1st line 2nd line 2nd line 2nd line 2nd line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1st line 1st line 1st line 2nd line 2nd line 2nd line

SQJ264EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 2.0 10000 0.05 10000 1.7 ID = 8 A 0.04 1000 1000 1.4 VGS = 10 V 0.03 1.1 0.02 100 TJ = 150 °C 100 0.8 0.01 TJ = 25 °C 0.5 10 0.00 10 -50 -25 0 25 50 75 100 125 150 175 0 2 4 6 8 10 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 73 10000 0.5 10000 ID = 1 mA 71 0.1 1000 1000 69 -0.3 ID = 5 mA 67 -0.7 100 100 ID = 250 μA 65 -1.1 63 10 -1.5 10 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 100 10000 1000 10000 IDM limited T 100 10 J = 150 °C 1000 100 1μ0s00 10 1 1 ms TJ = 25 °C 1 10 ms 100 Limited by R a DS(on) 100 ms, 1 s, 10 s1, 0D0C 0.1 BVDSS limited 0.1 TC = 25 °C, single pulse 0.01 10 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Safe Operating Area S19-1108-Rev. A, 30-Dec-2019 8 Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2nd line 2nd line 2nd line IS - Source Current (A) VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Normalized) 1st line 1st line 1st line 2nd line 2nd line 2nd line 2nd line 2nd line 2nd line ID - Drain Current (A) VGS(th) - Variance (V) RDS(on) - On-Resistance (Ω) 1st line 1st line 1st line 2nd line 2nd line 2nd line

SQJ264EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 10000 1 Duty cycle = 0.5 0.2 1000 Notes 0.1 PDM 0.1 0.05 t1 t 100 2 t 0.02 1. Duty cycle, D = 1 t2 2. Per unit base = RthJA = 85 °C/W (t) Single pulse 3. TJM - TA = PDMZthJA 4. Surface mounted 0.01 10 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 1 Duty cycle = 0.5 0.2 1000 0.1 0.1 0.05 100 0.02 Single pulse 0.01 10 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from singl e pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the par t mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silico n Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75486. S19-1108-Rev. A, 30-Dec-2019 9 Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Normalized Effective Transient Normalized Effective Transient Thermal Impedance Thermal Impedance 1st line 1st line 2nd line 2nd line

Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Assymetric Case Outline b2 D5 D4 K1 D3 D2 A1 b b1 e θ D1 b3 K2 D 0.25 gauge line PIN 1 PIN 1 MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 0.06 0.13 0.000 0.003 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.04 0.12 0.20 0.002 0.005 0.008 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.63 3.73 3.83 0.143 0.147 0.151 D3 0.81 0.91 1.01 0.032 0.036 0.040 D4 1.98 2.08 2.18 0.078 0.082 0.086 D5 1.47 1.57 1.67 0.058 0.062 0.066 e 1.20 1.27 1.34 0.047 0.050 0.053 E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 E3 1.89 1.99 2.09 0.074 0.078 0.082 F 0.05 0.12 0.19 0.002 0.005 0.007 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.41 0.51 0.61 0.016 0.020 0.024 K1 0.64 0.74 0.84 0.025 0.029 0.033 K2 0.54 0.64 0.74 0.021 0.025 0.029 W 0.13 0.23 0.33 0.005 0.009 0.013 W1 0.31 0.41 0.51 0.012 0.016 0.020 W2 2.72 2.82 2.92 0.107 0.111 0.115 W3 2.86 2.96 3.06 0.113 0.117 0.120 W4 0.41 0.51 0.61 0.016 0.020 0.024 θ 5° 10° 12° 5° 10° 12° DWG: 6009 Note • Millimeters will govern C14-0057-Rev. D, 07-Apr-14 1 Document Number: 62714 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PADs FOR PowerPAK® SO-8L DUAL ASYMMETRIC Recommended Minimum Pads Dimensions in mm [inches] Revision: 07-Mar-13 1 Document Number: 64477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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