ICE10N60　データシート

ICE10N60 Product Summary ICE10N60 N-Channel I T =25oC 10A Max D A Enhancement Mode MOSFET V(BR)DSS I =250uA 600V Min D rDS(on) V =10V 0.27 Typ GS Features Qg V =480V 43nC Typ DS • Low rDS(on) • Ultra Low Gate Charge D • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability G • Increased transconductance performance • Optimized design for high performance power systems S T0220 Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source. ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Maximum ratings b , at Tj=25oC, unless otherwise specified Parameter Symbol Conditions Value Unit a T =2 o 1 Continuous drain current I c 5 C 0 D o A Tc=100 C 6.6 Pulsed drain current ID, pulse Tc=25oC 30 A Avalanche energy, single pulse E AS ID=8.3A 340 mJ Avalanche current, repetitive I AR limited by Tjmax 5 A VDS=480V, ID=10A, MOSFET dv/dt ruggedness dv/dt 5 Tj=125o 0 V/ns C Static ±20 Gate source voltage VGS V AC (f>1Hz) ±30 Power dissipation Ptot Tc=25oC 95 W o Operating and storage temperature Tj, Tstg -55 to +150 C Mounting torque M 3 & 3.5 screws 60 Ncm a When mounted on 1inch square 2oz copper clad FR-4 b Pulse width limited by Tjmax SP-10N60-000-6 1 06/15/2021

ICE10N60 Values Parameter Symbol Conditions Unit Min Typ Max Thermal characteristics Thermal resistance, junction- R case a thJC - - 1.3 oC/W Thermal resistance, junction- RthJA leaded ambient a - - 62 Soldering temperature, wave 1.6mm (0.063in.) from T sold soldering only allowed at leads case for 10 s - - 260 oC Electrical characteristics b , at Tj=25oC, unless otherwise specified Static characteristics Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250µA 600 640 - V Gate threshold voltage VGS(th) VDS=VGS, ID=250µA 2.1 3 3.9 VDS=600V, VGS=0V, o - 0.1 1 Tj=25 C Zero gate voltage drain current IDSS µA VDS=600V, VGS=0V, o - 100 - Tj=150 C Gate source leakage current IGSS VGS=±20 V, VDS=0V - - 100 nA VGS=10V, ID=5A, o - 0.27 0.33 Drain-source Tj=25 C R on-state resistance DS (on) Ω VGS=10V, ID=5A, o - 0.71 - Tj=150 C Gate resistance RG f=1 MHZ, open drain - 3 - Ω Dynamic characteristics Input capacitance Ciss VDS=25 V - 1250 - Output capacitance C VGS=0 V, oss VDS=100 V - 61 - pF f=1 MHz Reverse transfer capacitance Crss VDS=25 V - 12 - Transconductance gfs VDS>2*ID*RDS, ID=5A - 12 - S Turn-on delay time td(on) - 17 - Rise time tr VDS=380V, VGS=10V, - 8 - ns Turn-off delay time td(off) ID=5A, RG=4Ω (External) - 79 - Fall time tf - 5.2 - SP-10N60-000-6 2 06/15/2021

ICE10N60 Values Parameter Symbol Conditions Unit Min Typ Max Gate charge characteristics Gate to source charge Qgs - 7 - Gate to drain charge Qgd - 16 - nC VDS=480 V, ID=10A, V Gate charge total Q GS=0 to 10 V g - 43 - Gate plateau voltage Vplateau - 5.4 - V Reverse Diode Continuous forward current IS VGS=0V - - 10 A Diode forward voltage VSD VGS=0V, IS=IF - 0.9 1.2 V Reverse recovery time trr - 303 - ns V Reverse recovery charge RR=300V, IS=IF, Qrr - 4.207 - µC diFIdt=100 A/µS Peak reverse recovery current Irm - 29 - A SP-10N60-000-6 3 06/15/2021

ICE10N60 Output Characteristics Transfer Characteristics 30 30 25 25 20 20 VGS=20V 15 15 25˚C VGS=6 thru 10V 10 10 -55˚C V TJ = 125˚C GS=5V 5 5 0 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 V V DS - Drain-to-Source Voltage (V) GS - Gate-to-Source (V) Drain-Source On-State Resistance Drain-Source On-State Resistance vs. Drain Current vs. Gate-to-Source Voltage 0.60 1.00 0.55 0.90 0.50 0.80 0.45 0.40 0.70 VGS = 10v 0.35 0.60 ID = 5A 0.30 0.50 0.25 0.40 0.20 0.30 0.15 0.10 0.20 0.05 0.10 0.00 0.00 0 2 4 6 8 10 12 14 16 18 20 2 3 4 5 6 7 8 9 10 ID- Drain Current (A) VGS - Gate-to-Source Voltage (V) Drian-Source On State Resistance Gate Threshold Voltage vs. Junction Temperature vs. Junction Temperature 3.0 1.3 1.2 2.5 1.1 ID = 250µA 2.0 VGS = 10V 1.0 ID = 5A 0.9 1.5 0.8 1.0 0.7 0.6 0.5 0.5 0.0 0.4 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) TJ - Junction Temperature (oC) SP-10N60-000-6 4 06/15/2021 RDS(on) - On State Resistance R (Normalized) DS(on) - On State Resistance (Ω) ID - Drain Current (A) V RGS(th) - Gate Threshold Voltage DS(on) - On State Resistance (Ω) (Normalized) ID - Drain Current (A)

ICE10N60 Gate Charge Drain-toSource Breakdown Voltage vs. Junction Temperature 10 1.14 1.12 9 VDS = 480V 1.10 8 ID = 10A 1.08 7 1.06 ID = 1mA 1.04 6 1.02 5 1.00 4 0.98 0.96 3 0.94 2 0.92 1 0.90 -50 -25 0 25 50 75 100 125 150 0 0 5 10 15 20 25 30 35 40 45 TJ - Junction Temperature (oC) Qg - Total Gate Charge (nC) Capacitance Drain-Source Diode Forward Voltage 10000 100 Ciss 1000 Coss 100 TJ = 125˚C TJ = 25˚C 10 Crss 10 1 0 50 100 150 200 1 0.2 0.4 0.6 0.8 1.0 1.2 VDS - Drain-to-Source Voltage (V) VDS - Drain-toSource Voltage (V) Maximum Rated Forward Biased Safe Operating Area Transient Thermal Response, Junction-to-Case 100 1.00 R 0.50 DS(on) Limited VGS=10V 0.20 10 T o A = 25 C, 10µs 0.10 Single 0.10 100µ 0.05 1 1ms 0.02 10ms 0.01 0.1 RDS(on) Limit Single Pulse Package Limit DC Thermal Limit 0.01 0.00 0.1 1 10 100 1000 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 V t - Time (seconds) DS - Drain-to-Source Voltage (V) SP-10N60-000-6 5 06/15/2021 ID - Drain Current (A) C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) r(t) - Transient Thermal Resistance (Normalized) V(BR)DSS - Drain-to-Source Voltage IF - Diode Current (A) (Normalized)

ICE10N60 Package Outline: TO-220 SP-10N60-000-6 6 06/15/2021

ICE10N60 Package Outline: TO-220 SP-10N60-000-6 7 06/15/2021

ICE10N60 ICEMOS SUPERJUNCTION PATENT PORTFOLIO ICEMOS GRANTED PATENTS US7,429,772 US7,439,178 US7,446,018 US7,579,607 US7,723,172 US7,795,045 US7,846,821 US7,944,018 US8,012,806 US8,030,133 3D SEMI PATENTS LICENSED TO ICEMOS US7,041,560B2 US7,023,069B2 US7,364,994 US7,227,197B2 US7,304,944B2 US7,052,982B2 US7,339,252 US7,410,891 US7,439,583 US7,227,197B2 US6,635,906 US6,936,867 US7,015,104 US9,109,110 US7,271,067 US7,354,818 US7,052,982, US7,199,006B2 Note: additional patents in China, Korea, Japan, Taiwan, Europe have also been granted to IceMOS and 3D Semi for Superjunction MOSFETs with 70 additional Patent applications in process in the USA and the above listed countries. SP-10N60-000-6 8 06/15/2021

ICE10N60 Marking Information YY = Last two digits of the year WW = Work week YYWW * XXXXX * = Site ID ICE10N60 XXXXX = Lot ID ICE10N60 = ICE is IceMOS logo and 10N60 is a designated device part number Disclaimer Information contained in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics. All product, data sheet are subject to change without notice to improve reliability. ICEMOS technology will not be responsible for damages of any nature resulting from the use or reliance upon the information contained in this data sheet. SP-10N60-000-6 9 06/15/2021