ICE8S65FP　データシート

ICE8S65FP Product Summary ICE8S65FP N-Channel ID TA=25oC 8A Max Enhancement Mode MOSFET BVDSS ID=250uA 650V Min rDS(on) VGS=10V 0.33Ω Typ Features Qg VDS=480V 12.7nC Typ • Low rDS(on) • Ultra Low Gate Charge D • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability G • Optimized design for hard switching SMPS topologies S T0220FP Isolated (T0-220) 1=Gate, 2=Drain, 3=Source. ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Maximum ratings b at Tj=25oC, unless otherwise specified Parameter Symbol Conditions Value Unit Tc=25o Continuous drain current C 8 ID A Tc=100oC 5.0 Pulsed drain current ID, pulse Tc=25oC 18 A Avalanche energy, single pulse E AS ID=2.7A 40 mJ Avalanche current, repetitive I AR limited by Tjmax 2.7 A VDS=480V, ID=8A, MOSFET dv/dt ruggedness dv/dt 50.0 V/ns Tj=125oC Static ±20 Gate source voltage VGS V AC (f>1Hz) ±30 Power dissipation Ptot Tc=25oC 35 W o Operating and storage temperature Tj, Tstg -55 to +150 C Mounting torque M 3 screws 50 Ncm a When mounted on 1inch square 2oz copper clad FR-4 b limited by Tjmax SP-8S65FP-000-1 08/17/2022 1

ICE8S65FP Values Parameter Symbol Conditions Unit Min Typ Max Thermal characteristics Thermal resistance, junction- case a RthJC - - 3.5 oC/W Thermal resistance, junction- ambient a RthJA leaded - - 62 Soldering temperature, wave 1.6mm (0.063in.) from T soldering only allowed at leads sold case for 10 s - - 260 oC Electrical characteristics at Tj=25oC, unless otherwise specified Static characteristics Drain-source breakdown V voltag (BR)DSS VGS=0 V, ID=250µA 650 700 - e V Gate threshold voltage VGS(th) VDS=VGS, ID=250µA 2.1 3 3.9 VDS=650V, VGS=0V, o - 0.1 1 Tj=25 C Zero gate voltage drain current IDSS µA VDS=650V, VGS=0V, o - 100 - Tj=150 C Gate source leakage current IGSS VGS=±20 V, VDS=0V - - 100 nA VGS=10V, ID=4A, o - 0.33 0.40 Drain-source Tj=25 C on-state resistance rDS(on) Ω VGS=10V, ID=4A, o T - 0.90 - j=150 C Gate resistance RG f=1 MHZ, open drain - 1.2 - Ω Dynamic characteristics Ciss VDS=25 V - 674 - VGS=0 V, Input capacitance Coss VDS=100 V - 30 - f=1 MHz pF Crss VDS=25 V - 1.54 - Transconductance gfs VDS>2*ID*RDS, ID=4A - 7.1 - S Turn-on delay time td(on) - 8.6 - Rise time t VDS=380V, VGS=10V, r - 6.1 - ID=8A, ns Turn-off delay time td(off) RG=4Ω (External) - 22.5 - Fall time tf - 2.7 - SP-8S65FP-000-1 08/17/2022 2

ICE8S65FP Values Parameter Symbol Conditions Unit Min Typ Max Gate charge characteristics Gate to source charge Qgs - 3.8 - Gate to drain charge Qgd - 3.6 - nC VDS=480 V, ID=8A, Gate charge total V Q GS=10 V g - 12.7 - Gate plateau voltage Vplateau - 5.7 - V Reverse Diode Continuous forward current IS VGS=0V - - 8 A Diode forward voltage VSD VGS=0V, IS=IF - 0.9 1.2 V Reverse recovery time trr - 308 - ns V Reverse recovery charge Q RR=50V, IS=IF, rr - d 2 - µC iFIdt=100 A/µS Peak reverse recovery current Irm - 13 - A Output Characteristics Transfer Characteristics 15 15 VGS=7V thru 10V 12 10 9 VGS=6V TJ = 125˚C 6 5 -55˚C 25˚C VGS=5V 3 0 0 0 2 4 6 8 10 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source (V) SP-8S65FP-000-1 08/17/2022 3 ID - Drain Current (A) ID - Drain Current (A)

ICE8S65FP Drain - Source On-State Resistance Drain-Source On-State Resistance vs. Drain Current vs. Gate-to-Source Voltage 0.9 0.50 0.8 ID = 4A 0.7 0.45 0.6 0.5 VGS = 10V 0.40 0.4 0.3 0.2 0.35 0.1 0 0.30 0 4 8 12 16 2 4 6 8 10 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) Drian-Source On State Resistance Gate Threshold Voltage vs. Junction Temperature vs. Junction Temperature 3.0 1.3 1.2 2.5 1.1 ID = 250µA 2.0 VGS = 10V 1.0 ID = 4A 0.9 1.5 0.8 1.0 0.7 0.6 0.5 0.5 0.0 0.4 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) TJ - Junction Temperature (oC) Gate Charge Drain-toSource Breakdown Voltage vs. Junction Temperature 10 1.12 9 V 1.10 DS = 480V 8 ID = 10A 1.08 7 1.06 ID = 1mA 1.04 6 1.02 5 1.00 4 0.98 3 0.96 2 0.94 1 0.92 0 0.90 0 4 8 12 16 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (oC) SP-8S65FP-000-1 08/17/2022 4 VGS - Gate-to-Source Voltage (V) RDS(on) - On State Resistance RDS(on) - On State Resistance (Ω) (Normalized) V(BR)DSS - Drain-to-Source Voltage VGS(th) - Gate Threshold Voltage RDS(on) - On State Resistance (Ω) (Normalized) (Normalized)

ICE8S65FP Capacitance Source-Drain Diode Forward Voltage 10000 100 Ciss 1000 Coss TJ = 125˚C TJ = 25˚C 100 10 10 Crss 1 1 0 50 100 150 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VDS - Drain-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Full Pak TO-220 Package Maximum Rated Forward Biased SOA 100 RDS(on) Limited VGS=10V 10 TA = 25oC, Single Pulse 10µs 100µs 1 1ms 10ms RDS(on) Limit 0.1 Package Limit DC Thermal Limit 0.01 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) Full Pak TO-220 Transient Thermal Response, Junction-to-Ambient 1.00 0.50 0.20 0.10 0.10 0.05 0.02 0.01 Single Pulse 0.00 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 t - Time (seconds) SP-8S65FP-000-1 08/17/2022 5 C - Capacitance (pF) r(t) - Transient Thermal Resistance ID - Drain Current (A) (Normalized) IS - Source Current (A)

ICE8S65FP Package Outline: TO-220 FullPAK SP-8S65FP-000-1 08/17/2022 6

ICE8S65FP Package Outline: TO-220 FullPAK SP-8S65FP-000-1 08/17/2022 7

ICE8S65FP ICEMOS SUPERJUNCTION PATENT PORTFOLIO ICEMOS GRANTED PATENTS US7,429,772 US7,439,178 US7,446,018 US7,579,607 US7,723,172 US7,795,045 US7,846,821 US7,944,018 US8,012,806 US8,030,133 3D SEMI PATENTS LICENSED TO ICEMOS US7,041,560B2 US7,023,069B2 US7,364,994 US7,227,197B2 US7,304,944B2 US7,052,982B2 US7,339,252 US7,410,891 US7,439,583 US7,227,197B2 US6,635,906 US6,936,867 US7,015,104 US9,109,110 US7,271,067 US7,354,818 US7,052,982, US7,199,006B2 Note: additional patents in China, Korea, Japan, Taiwan, Europe have also been granted to IceMOS and 3D Semi for Superjunction MOSFETs with 70 additional Patent applications in process in the USA and the above listed countries. SP-8S65FP-000-1 08/17/2022 8

ICE8S65FP Marking Information YY = Last two digits of the year WW = Work week * = Site ID YYWW * XXXXX ICE8S65 XXXXX = Lot ID ICE8S65 = ICE is IceMOS logo and 8S65 is a designated device part number Disclaimer Information contained in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics. All product, data sheet are subject to change without notice to improve reliability. ICEMOS technology will not be responsible for damages of any nature resulting from the use or reliance upon the information contained in this data sheet. SP-8S65FP-000-1 08/17/2022 9