ICE47N60W　データシート

ICE47N60W ICE47N60W Product Summary N-Channel ID TA=25oC 47A Max Enhancement Mode MOSFET V(BR)DSS ID=1mA 600V Min rDS(on) VGS=10V 0.06Ω Typ Features Qg VDS=240V 189nC Typ • TO247 package • Low r D DS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability G • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems S TO247 1:G, 2:D, 3:S, 4:D, (TO-247) ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PAT ENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HA VE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE . Maximum ratings at Tj=25oC, unless otherwise specified Parameter Symbol Conditions Value Unit Tc=25o Continuous drain current I C 47 D A Tc=100oC 30 Pulsed drain current ID, pulse Tc=25oC 117 A Avalanche energy, single pulse E AS ID=20A 2000 mJ Avalanche current, repetitive I AR limited by Tjmax 20 A VDS=480V, ID=47A, MOSFET dv/dt ruggedness dv/dt 5 Tj=125o 0 V/ns C Static ±20 Gate source voltage VGS V AC (f>1Hz) ±30 Power dissipation Ptot Tc=25oC 431 W o Operating and storage temperature Tj, Tstg -55 to +150 C Mounting torque M 3 & 3.5 screws 60 Ncm a When mounted on 1inch square 2oz copper clad FR-4 SP-47N60W-000-12 10/20/2022 1

ICE47N60W Values Parameter Symbol Conditions Unit Min Typ Max Thermal characteristics Thermal resistance, junction- case a RthJC - - 0.29 oC/W Thermal resistance, junction- ambient a RthJA leaded - - 62 Soldering temperature, wave T 1.6mm (0.063in.) from soldering only allowed at leads sold case for 10 s - - 260 oC Electrical characteristics at Tj=25oC, unless otherwise specified Static characteristics Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1mA 600 640 - V Gate threshold voltage VGS(th) VDS=VGS, ID=250µA 2.1 3.2 3.9 VDS=600V, VGS=0V, Tj=25oC - 0.5 3 Zero gate voltage drain current IDSS µA VDS=600V, VGS=0V, - Tj=150o 80 - C Gate source leakage current IGSS VGS=±20 V, VDS=0V - - 200 nA VGS=10V, ID=24A, Tj=25oC - 0.06 0.068 Drain-source on-state resistance rDS(on) Ω VGS=10V, ID=24A, Tj=150oC - 0.16 - Gate resistance RG f=1 MHZ, open drain - 5 - Ω Dynamic characteristics Input capacitance Ciss VGS=0 V, VDS=25 V, - 6090 - Reverse transfer capacitance Crss f=1 MHz - 1 - pF VGS=0 V, VDS=100 V, Output capacitance Coss - 260 - f=1 MHz Transconductance gfs VDS>2*ID*RDS, ID=24A - 40 - S Turn-on delay time td(on) - 49.5 - Rise time t VDS=380V, VGS=10V, r - 24.9 - ID=23.5A, RG=4Ω ns Turn-off delay time td(off) (External) - 267 - Fall time tf - 6.9 - SP-47N60W-000-12 10/20/2022 2

ICE47N60W Values Parameter Symbol Conditions Unit Min Typ Max Gate charge characteristics Gate to source charge Qgs - 31 - Gate to drain charge Qgd nC VDS=480 V, ID=47A, - 65 - Gate charge total Q VGS=0 to 10 V g - 189 - Gate plateau voltage Vplateau - 6.4 - V Reverse Diode Continuous forward current IS VGS=0V - - 47 A Diode forward voltage VSD VGS=0V, IS=IF - 0.95 1.2 V Reverse recovery time trr - 552 - ns VRR=50V, IS=IF, Reverse recovery charge Qrr diFIdt=100 A/µS - 12 - µC Peak reverse recovery current Irm - 35 - A Output Characteristics Transfer Characteristics 90 100 80 70 80 VGS= 7V thru 10V 60 60 50 VGS=6V 40 40 30 -55˚C 20 20 TJ = 125˚C 25˚C 10 VGS=5V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source (V) SP-47N60W-000-12 10/20/2022 3 ID - Drain Current (A) ID - Drain Current (A)

ICE47N60W Drain-Source On-State Resistance Drain-Source On-State Resistance vs. Drain Current vs. Gate-to-Source Voltage 0.14 0.12 0.12 ID = 24A 0.10 0.10 0.08 VGS = 10v 0.08 0.06 0.04 0.06 0.02 0.00 0.04 0 10 20 30 40 50 60 70 80 90 2 3 4 5 6 7 8 9 10 ID- Drain Current (A) VGS - Gate-to-Source Voltage (V) Drian-Source On State Resistance Gate Threshold Voltage vs. Junction Temperature vs. Junction Temperature 3.0 1.3 1.2 2.5 1.1 ID = 250µA 2.0 VGS = 10V 1.0 ID = 24A 0.9 1.5 0.8 1.0 0.7 0.6 0.5 0.5 0.0 0.4 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( oC) TJ - Junction Temperature ( oC) Gate Charge Drain-toSource Breakdown Voltage vs. Junction Temperature 10 1.14 9 1.12 VDS = 240V 1.10 8 ID = 24A 1.08 7 1.06 ID = 5mA 6 1.04 5 1.02 1.00 4 0.98 3 0.96 2 0.94 1 0.92 0 0.90 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature ( oC) SP-47N60W-000-12 10/20/2022 4 V RDS(on) - On State Resistance GS - Gate-to-Source Voltage (V) RDS(on) - On State Resistance ( Ω) (Normalized) V(BR)DSS - Drain-to-Source Voltage VGS(th) - Gate Threshold Voltage RDS(on) - On State Resistance ( Ω) (Normalized) (Normalized)

ICE47N60W Capacitance Source-Drain Diode Forward Voltage 100 100000 10000 Ciss Coss 1000 TJ = 125˚C TJ = 25˚C 10 100 10 Crss 1 0 50 100 150 200 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VDS - Drain-to-Source Voltage (V) VSD – Source-to-Drain Voltage (V) Maximum Rated Forward Biased Safe Operating Area 1000 RDS(on) Limited VGS=10V 100 TA = 25oC, 1ms Single Pulse 10 10ms 100ms 1 DC 0.1 0.01 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) Transient Thermal Response, Junction-to-Ambient 1.00 0.50 0.20 0.10 0.10 0.05 0.02 0.01 Single Pulse 0.00 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 t - Time (seconds) SP-47N60W-000-12 10/20/2022 5 C - Capacitance (pF) r(t) - Transient Thermal Resistance (Normalized) ID - Drain Current (A) IS - Source Current (A)

ICE47N60W Package Outline: TO-247 SP-47N60W-000-12 10/20/2022 6

ICE47N60W Package Outline: TO-247 SP-47N60W-000-12 10/20/2022 7

ICE47N60W ICEMOS SUPERJUNCTION PATENT PORTFOLIO ICEMOS GRANTED PATENTS US7,429,772 US7,439,178 US7,446,018 US7,579,607 US7,723,172 US7,795,045 US7,846,821 US7,944,018 US8,012,806 US8,030,133 3D SEMI PATENTS LICENSED TO ICEMOS US7,041,560B2 US7,023,069B2 US7,364,994 US7,227,197B2 US7,304,944B2 US7,052,982B2 US7,339,252 US7,410,891 US7,439,583 US7,227,197B2 US6,635,906 US6,936,867 US7,015,104 US9,109,110 US7,271,067 US7,354,818 US7,052,982, US7,199,006B2 Note: additional patents in China, Korea, Japan, Ta iwan, Europe have also been granted to IceMOS and 3D Semi for Superjunction MOSFETs with 70 additional Patent appl ications in process in the USA and the above listed countries. SP-47N60W-000-12 10/20/2022 8

ICE47N60W Marking Information YY = Last two digits of the year WW = Work week * = Site ID YYWW * XXXXX XXXXX = Lot ID ICE47N60 ICE47N60 = ICE is Icemos logo and 47N60 is a designated device part number Disclaimer Information contained in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics. All product, data sheet are subject to change without notice to improve reliability. ICEMOS technology will not be responsible for damages of any nature resulting from the use or reliance upon the information contained in this data sheet. SP-47N60W-000-12 10/20/2022 9